DG85N03PB — 85 V N-channel MOSFET

Silicongear Corporation DG-FET™ N-channel power MOSFET in a TO-220AB-D package, designed for efficient power switching in motor drives, battery systems and UPS equipment.

Key specifications

• Drain-source voltage: 85 V
• Maximum on-resistance: 5.2 mΩ at VGS = 10 V
• Gate-source voltage: ±20 V
• Continuous drain current: 111 A; pulsed current: 438 A
• Power dissipation: 113 W
• Junction temperature: −55 to +150 °C

Absolute maximum ratings above are specified at a case temperature of 25 °C where applicable. Actual operating limits depend on thermal design and the application. Optimized gate charge helps reduce switching losses. Lead-free, RoHS compliant and halogen-free.